Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs
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چکیده
منابع مشابه
Impact of Elliptical Cross-Section on Some Electrical Properties of Gate-All-Around MOSFETs
-Silicon (Si) Gate-All-Around (GAA) MOSFETs offers full electrostatic control over the gate which makes them promising candidates for the next generation complimentary metal-oxide-semiconductor field-effect transistors (CMOS) devices. Due to variations in the growth condition, the cross-section of GAA MOSFETs is often elliptical instead of being perfectly circular. This elliptical cross section...
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ژورنال
عنوان ژورنال: Bonfring International Journal of Power Systems and Integrated Circuits
سال: 2012
ISSN: 2250-1088,2277-5072
DOI: 10.9756/bijpsic.3139